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Aihara, Jun; Hojo, Kiichi; Furuno, Shigemi*; Shimura, Kenichiro; Hojo, Tomohiro*; Sawa, Kazuhiro; Yamamoto, Hiroyuki; Motohashi, Yoshinobu*
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.441 - 444, 2006/01
Times Cited Count：1 Percentile：12.86(Instruments & Instrumentation)no abstracts in English
films by RBS/CYamamoto, Shunya; Takeyama, Akinori; Yoshikawa, Masahito
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.377 - 379, 2006/01
Times Cited Count：9 Percentile：53.56(Instruments & Instrumentation)no abstracts in English
Taguchi, Tomitsugu; Igawa, Naoki; Jitsukawa, Shiro; Shimura, Kenichiro
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.469 - 472, 2006/01
Times Cited Count：3 Percentile：28.19(Instruments & Instrumentation)SiC/SiC composites are one of the candidate materials for first wall in a fusion reactor because of their high strength at high temperature and low residual radioactivity after irradiation. In the fusion reactor, these materials are required to have high thermal diffusivity for heat exchange and reducing the thermal shock. Under fusion conditions, helium (He) and hydrogen (H) are produced in SiC. In this study, the effect of He ions implantation on the thermal diffusivities of SiC and SiC/SiC composite were investigated. In the results, the thermal diffusivities of SiC and SiC/SiC composites decreased after He ions implantation. However, the thermal diffusivities of SiC and SiC/SiC composites hardly reduced in the operation temperature of fusion reactor. The thermal diffusivities of He implanted specimens were partly recovered by annealing. The defect concentration induced by He implantation, X
, in SiC/SiC composites was estimated. The X rapidly decreased around 500 
C. The reason is that the He release from SiC starts at 500 C.
Nagata, Shinji*; Yamamoto, Shunya; Tokunaga, Kazutoshi*; Tsuchiya, Bun*; To, Kentaro*; Shikama, Tatsuo*
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.553 - 556, 2006/01
Times Cited Count：7 Percentile：47.51(Instruments & Instrumentation)no abstracts in English
Takahiro, Katsumi*; Terai, Atsushi*; Oizumi, Shinnosuke*; Kawatsura, Kiyoshi*; Yamamoto, Shunya; Naramoto, Hiroshi
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.445 - 447, 2006/01
Times Cited Count：9 Percentile：53.56(Instruments & Instrumentation)X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy have been applied to investigate amorphization processes by ion irradiation for various carbon materials, including highly oriented pyrolytic graphite (HOPG), isotropic graphite, glassy carbon (GC) and C
crystalline film. It is found that the asymmetry of the XPS C 1s line increases as the irradiation dose increases. The origin of the asymmetry appeared on the C 1s line is discussed. It is concluded that the asymmetry of the C 1s line is not correlated with the increase in the size of a graphitic layer, but is related with the structural disorders, such as a bond angle disorder.
